1. A. Vilches, K. Michelakis, K. Fobelets, C. Papavassiliou, T. Hackbarth and U. König, “Buried-channel SiGe HMODFET device potential for micropower applications” Accepted for Solid State Electronics, Special issue on strained-Si (2004)
2. K. Fobelets, W. Jeamsaksiri, C. Papavasilliou, A. Vilches, V. Gaspari, J.E. Velazquez-Perez, K. Michelakis, T. Hackbarth, and U. König, “Comparison of sub-micron Si:SiGe heterojunction nFETs to Si nMOSFET in present-day technologies”, Accepted for Solid State Electronics, Special issue on strained-Si (2004)
3. A. Vilches, K. Fobelets, K. Michelakis, S. Despotopoulos, C. Papavasilliou, T. Hackbarth, and U. Konig, “Micropower behaviour of 100nm Schottky gated SiGe n-HFETs from directy extracted RF parameters”, Submitted to IEEE Trans. Electron. Dev.