1. K. Fobelets, W. Jeamsaksiri, J. Hampson, C. Toumazou, and T.Thornton, “Si:SiGe MODFET current mirror”, Electron.Lett. 34(22) 2076 (1998)
2. Pappavassiliou C., Fobelets K., Toumazou C. "SiGe hetero-FET potential for micro-power applications" invited paper, IEICE Trans. Electron, E00-A(2000)
3. K. Fobelets, W.Jeamsaksiri, J. Hampson, C. Toumazou, “Simulations of Si:SiGe MODFET analogue applications“ International Journal of Electronics, 89(8), pp593-602 (2002)
4. A.Vilches, K. Fobelets, K. Michelakis, S. Despotopoulos, C. Papavassiliou, T. Hackbarth, and U. König, “A Novel Monolithic Micropower Amplifier Using a SiGe n-MODFET Device”, IEE Electronics Letters, 39 (12): 884-886 JUN 12 2003
5. A. Vilches, K. Michelakis, K. Fobelets, C. Papavassiliou, T. Hackbarth and U. König, “Buried-channel SiGe HMODFET device potential for micropower applications” Accepted for Solid State Electronics, Special issue on strained-Si (2004)
6. A. Vilches, K. Fobelets, K. Michelakis, S. Despotopoulos, C. Papavasilliou, T. Hackbarth, and U. Konig, “SiGe HMODFET 'KAIST' Micropower Model and Amplifier Realisation”, accepted for IEEE Transactions on Circuits and Systems (2004)