1. H. S. Yuk, T. Tate, K. Fobelets, J. Zhang, D.S. Mcphail, R.J. Chater, “Fabrication technique of SiGe-on-insulator (SGOI) substrates by ion-implantation of Ge ions for Si-strained SiGe hetero-structure-CMOS technologies” IEEE - IEICE 2003 IMFEDK, Osaka, Japan 16-18 July 2003
2. H.S. Yuk, K. Fobelets, T. Tate and D.S. McPhail, “Formation of novel SiGe-on-insulator substrate structures by Ge+ implantation and oxidation for stained-Si-MOSFET technology” accepted for 2004 MRS Spring Meeting, USA