1. K. Fobelets, R.S. Ferguson, V. Gaspari, J.E. Verlazquez-Perez, K. Michelakis, S. Despotopoulos, J. Zhang, and C. Papavassilliou, “Experimental study of depletion mode SiGe MOSFETs for low temperature operation”, ESSDERC 2002, Italy (2002)

2. V. Gaspari, K. Fobelets, J.E. Velazquez-Perez, R. Ferguson, K. Michelakis, S. Despotopoulos, and C. Papavassilliou, “Effect of temperature on the transfer characteristic of a 0.5µm-gate Si:SiGe depletion-mode n-MODFET”, ISTDM 2003 , Jan 15-17 Japan (2003).

3. V. Gaspari, K. Fobelets, J.E. Velazquez-Perez, R. Ferguson, K. Michelakis, S. Despotopoulos, and C. Papavassilliou, “Effect of temperature on the transfer characteristic of a 0.5µm-gate Si:SiGe depletion-mode n-MODFET”, Appl. Surface Sci (2003).

4. V. Gaspari, K. Fobelets, J.E. Velazquez-Perez, R. Ferguson, K. Michelakis, S. Despotopoulos, and C. Papavassilliou, “Thermal study of 0.5mm-gate Si/SiGe Depletion-Mode n-MOSFETs”, Invited talk, CDE-2003, Calella (Barcelona), Spain (2003)