INTERESTS
Development of instruments to explore our surroundings from the molecular
scale to the structure of entire planets. Current projects include the
fabrication of silicon microseismometers to investigate Mars, the NetLander
SEIS-SP project, and development of a chemical
microscope combining Raman spectroscopy with atomic-force Microscopy, the
Raman-AFM.
ACHEIVEMENTS
I developed a technique for determining the strain in semiconductor
heterostructures at the nanometer scale for my PhD work at the Cavendish
Laboratory, Cambridge. While at the Jet Propulsion Laboratory in Pasadena
I used silicon micromachining to produce instruments for planetary exploration,
including prototype silicon microseismometers and a microscopy station
built for the cancelled 2001 Mars lander.
AIMS
To deliver a set of microseismometers for the 2007 Mars NetLander mission.
To produce chemical microscopy at the molecular scale. To combine new fabrication
techniques with novel instrument concepts.
TEACHING
My course homepage, Engineering Materials, can be found here. You must login with EEE\username.
JOURNAL PUBLICATIONS
1. Pike, W.T., Brown, L.M., Newstead, S.M., Powell, A.R. “The determination
of strain in Si-Ge superlattices by electron diffraction in a scanning
transmission-electron microscope” J. Cryst. Growth 111 (1991) 925
2. George T., Anderson M.S., Pike, W.T., Lin T.L., Fathauer, R.W. “Microstructural investigations of light-emitting porous Si layers” Appl. Phys. Lett. 60 (1992) 2359
3. Pike, W.T. Fathauer, R.W., Anderson, M.S. “Surface morphology of molecular-beam epitaxially grown Sil-xGex layers on (100) and (110) Si” J. Vac. Sci. B 10 (1992) 1990
4. Fathauer, R.W., George, T., Pike, W.T. “Co diffusion and growth of buried single-crystal CoSi2 in Si(111) by endotaxy” J. Appl. Phys. 72 (1992) 1874
5. Fathauer, R.W. George, T., Jones, E.W., Pike, W.T., Ksendzov, A. “New class of Si-based superlattices - alternating layers of crystalline Si and porous amorphous Sil-xGex alloys” Appl. Phys. Lett. 61 (1992) 2350
6. Rich, D.H., George, T., Pike, W.T., Maserjian, J., Grunthaner, F.J. “Cathodoluminescence and transmission electron microscopy study of dark line defects in thick In0.2Ga0.8As GaAs multiple quantum wells” J. Appl. Phys. 72 (1992) 5834
7. Ksendzov, A., Pike, W.T., Larsson, A. “Interband optical-transitions between confined and unconfined states in quantum wells” Phys. Rev. B 47 (1993) 2228
8. McGibbon, A.J., Brown, L.M., Bleloch, A.L., Browning, N.D., Pike, W.T. “Microscopy in solid-state science” Microsc. Res. 24 (1993) 299
9. Barner, J.B., Hunt, B.D., Foote, M.C., Pike, W.T., Vasquez, R.P. “YBa2Cu0___-based, edge-geometry SNS Josephson junctions with low-resistivity PrBa_Cu_0___ barriers” Physica C 207 (1993) 381
10. Ksendzov, A., Fathauer, R.W., George, T., Pike, W.T., Vasquez, R.P. “Visible photoluminescence of porous Sil-xGex obtained by stain etching”, Appl. Phys. Lett. 63 (1993) 200
11. Pike, W.T., “Energy-filtered microdiffraction in a dedicated scanning transmission electron microscope” Ultramicroscopy 51 (1993) 117
12. Pike, W.T., Ksendzov, A., Fathauer, R.W., George, T. “Microstructure and light emission in stain-Etched Sil -xGex Alloys” J. Vac. Sci. B 11 (1993) 1401
13. Fathauer, R.W., George, T., Jones, E.W., Pike, W.T., Ksendzov, A. “Novel Si-based superlattices consisting of alternating layers of crystalline Si and porous amorphous Sil-xGex alloys” J. Vac. Sci. B 11 (1993) 1518
14. Khan, M.A., Kuznia, J.N., Olson, D.T., George, T., Pike, W.T., “GamlAln digital alloy short-period superlattlces by switched atomic layer metalorganic chemical-vapor-deposition” Appl. Phys. Lett. 63 (1993) 3470
15. Gunapala, S.D., Bandara, K.M.S.V., Levine, B.F., Sarusi, G., Park, J.S., Pike, W.T., “High-performance InGaAs/GaAs quantum-well infrared photodetectors” Appl. Phys. Lett. 64 (1994) 3431
16. Hunt, B.D., Foote, M.C., Pike, W.T., Barner, J.B., Vasquez, R.P., “High-TC edge-geometry SNS weak links on silicon-on-sapphire substrates” Physica C 230 (1994) 141
17. Bell, L.D., Milliken, A.M., Manion, S.J., Kaiser, W.J., Fathauer, R.W., Pike, W.T. “Ballistic-electron-emission microscopy of strained Si1-x Gex layers” Phys. Rev. B 50 8082 (1994)
18. George, T., Pike, W.T., Khan, M.A., Kuznia, J.N., Changchien, P.J. “A microstructural comparison of the initial growth of AIN and GaN layers on basal-plane sapphire and SiC substrates by low-pressure metalorganic chemical-vapor-deposition” Elec. Mat. 24 (1995) 241
19. Bell, L.D., Kaiser, W.J., Manion, S.J., Milliken, A.M., Pike, W.T., “Measurements of local strain in Si1-xGex/Si heterostructures” J. Vac. Sci. Technol. B 13 (1995) 1602
20. Bell, L.D., Kaiser, W.J., Manion, S.J., Milliken, A.M., Pike, W.T., “Ballistic-electron-emission microscopy of strain nonuniformities in Si1-xGex/Si structures” Phys. Rev. B 52 (1995) 12081
21. George, T., Jacobsohn, E., Pike, W.T., Changchien, P.J., Khan, M.A. “Novel symmetry in the growth of gallium nitride on magnesium aluminate sustrates” Appl. Phys. Lett. 68 (1996) 337
22. P. Longonné, D. Giardini, Banerdt, B., Gagnepain-Beyneix, J., Mocquet, A., Spohn, T., Karczewski, J.F., Schibler, P., Cacho, S., Pike, W. T., Cavoit, C., Desautez, A., Favede, M., Gabsi, T., Simoulin, L., Striebig, N., Campillo, M., Deschamp, A., Hinderer, J., Leveque, J.J., Montagner, J.P., Rivera, L., Benz, W., Defraigne, P., Dehant, V., Fujimura, A., Mizutani, H., Oberst, J. “NetLander Very Broad Band Seismometer” Planetary and Space Science 48 (2000) 1289
23. Akiyama, T., Gautsch, S., de Rooij, N.F., Staufer, U., Niedermann, Ph., Howald, L., D. Müller, A. Tonin, H.-R. Hidber W. T. Pike, M. H. Hecht, “Atomic Force Microscope for Planetary Applications Sensors and Actuators B 91 (2001) 321
24. Anderson, M.S., Pike, W.T., “A Raman-atomic force microscope for apertureless-nearfield spectroscopy and optical trapping” Rev. Sci. Instruments 73 (2002) 1198
25. Gautsch S., Akiyama T., Imer R., de Rooij N.F., Staufer U., Niedermann
P., Howald L., Brandlin D., Tonin A., Hidber H.R., Pike W.T., “Measurement
of quartz particles by means of an atomic force microscope for planetary
exploration” Surface And Interface Analysis 33 (2002) 163