Dr Tom Pike

Development of instruments to explore our surroundings from the molecular scale to the structure of entire planets. Current projects include the fabrication of silicon microseismometers to investigate Mars, the NetLander SEIS-SP project, and development of a chemical microscope combining Raman spectroscopy with atomic-force Microscopy, the Raman-AFM.

I developed a technique for determining the strain in semiconductor heterostructures at the nanometer scale for my PhD work at the Cavendish Laboratory, Cambridge. While at the Jet Propulsion Laboratory in Pasadena I used silicon micromachining to produce instruments for planetary exploration, including prototype silicon microseismometers and a microscopy station built for the cancelled 2001 Mars lander.

To deliver a set of microseismometers for the 2007 Mars NetLander mission. To produce chemical microscopy at the molecular scale. To combine new fabrication techniques with novel instrument concepts.

My course homepage, Engineering Materials, can be found here. You must login with EEE\username.

1. Pike, W.T., Brown, L.M., Newstead, S.M., Powell, A.R. “The determination of strain in Si-Ge superlattices by electron diffraction in a scanning transmission-electron microscope” J. Cryst. Growth 111  (1991) 925

2. George T., Anderson M.S., Pike, W.T., Lin T.L., Fathauer, R.W. “Microstructural investigations of light-emitting porous Si layers” Appl. Phys. Lett. 60  (1992) 2359

3. Pike, W.T. Fathauer, R.W., Anderson, M.S. “Surface morphology of molecular-beam epitaxially grown Sil-xGex layers on (100) and (110) Si” J. Vac. Sci. B 10  (1992) 1990

4. Fathauer, R.W., George, T., Pike, W.T. “Co diffusion and growth of buried single-crystal CoSi2 in Si(111) by endotaxy” J. Appl. Phys. 72 (1992) 1874

5. Fathauer, R.W. George, T., Jones, E.W., Pike, W.T., Ksendzov, A. “New class of Si-based superlattices - alternating layers of crystalline Si and porous amorphous Sil-xGex alloys” Appl. Phys. Lett. 61 (1992) 2350

6. Rich, D.H., George, T., Pike, W.T., Maserjian, J., Grunthaner, F.J. “Cathodoluminescence and transmission electron microscopy study of dark line defects in thick In0.2Ga0.8As GaAs multiple quantum wells” J. Appl. Phys. 72  (1992) 5834

7. Ksendzov, A., Pike, W.T., Larsson, A. “Interband optical-transitions between confined and unconfined states in quantum wells” Phys. Rev. B 47  (1993) 2228

8. McGibbon, A.J., Brown, L.M., Bleloch, A.L., Browning, N.D., Pike, W.T. “Microscopy in solid-state science” Microsc. Res. 24  (1993) 299

9. Barner, J.B., Hunt, B.D., Foote, M.C., Pike, W.T., Vasquez, R.P. “YBa2Cu0___-based, edge-geometry SNS Josephson junctions with low-resistivity PrBa_Cu_0___ barriers” Physica C 207 (1993) 381

10. Ksendzov, A., Fathauer, R.W., George, T., Pike, W.T., Vasquez, R.P. “Visible photoluminescence of porous Sil-xGex obtained by stain etching”, Appl. Phys. Lett. 63 (1993) 200

11. Pike, W.T., “Energy-filtered microdiffraction in a dedicated scanning transmission electron microscope” Ultramicroscopy 51 (1993) 117

12. Pike, W.T., Ksendzov, A., Fathauer, R.W., George, T. “Microstructure and light emission in stain-Etched Sil -xGex Alloys” J. Vac. Sci. B 11  (1993) 1401

13. Fathauer, R.W., George, T., Jones, E.W., Pike, W.T., Ksendzov, A. “Novel Si-based superlattices consisting of alternating layers of crystalline Si and porous amorphous Sil-xGex alloys” J. Vac. Sci. B 11 (1993) 1518

14. Khan, M.A., Kuznia, J.N., Olson, D.T., George, T., Pike, W.T., “GamlAln digital alloy short-period superlattlces by switched atomic layer metalorganic chemical-vapor-deposition” Appl. Phys. Lett. 63 (1993) 3470

15. Gunapala, S.D., Bandara, K.M.S.V., Levine, B.F., Sarusi, G., Park, J.S., Pike, W.T., “High-performance InGaAs/GaAs quantum-well infrared photodetectors” Appl. Phys. Lett. 64 (1994) 3431

16. Hunt, B.D., Foote, M.C., Pike, W.T., Barner, J.B., Vasquez, R.P., “High-TC edge-geometry SNS weak links on silicon-on-sapphire substrates” Physica C 230 (1994) 141

17. Bell, L.D., Milliken, A.M., Manion, S.J., Kaiser, W.J., Fathauer, R.W., Pike, W.T. “Ballistic-electron-emission microscopy of strained Si1-x Gex layers” Phys. Rev. B 50 8082 (1994)

18. George, T., Pike, W.T., Khan, M.A., Kuznia, J.N., Changchien, P.J. “A microstructural comparison of the initial growth of AIN and GaN layers on basal-plane sapphire and SiC substrates by low-pressure metalorganic chemical-vapor-deposition” Elec. Mat. 24 (1995) 241

19. Bell, L.D., Kaiser, W.J., Manion, S.J., Milliken, A.M., Pike, W.T., “Measurements of local strain in Si1-xGex/Si heterostructures” J. Vac. Sci. Technol. B 13 (1995) 1602

20. Bell, L.D., Kaiser, W.J., Manion, S.J., Milliken, A.M., Pike, W.T., “Ballistic-electron-emission microscopy of strain nonuniformities in Si1-xGex/Si structures” Phys. Rev. B 52  (1995) 12081

21. George, T., Jacobsohn, E., Pike, W.T., Changchien, P.J., Khan, M.A. “Novel symmetry in the growth of gallium nitride on magnesium aluminate sustrates” Appl. Phys. Lett. 68  (1996) 337

22. P. Longonné, D. Giardini, Banerdt, B., Gagnepain-Beyneix, J., Mocquet, A., Spohn, T., Karczewski, J.F., Schibler, P., Cacho, S., Pike, W. T., Cavoit, C., Desautez, A., Favede, M., Gabsi, T., Simoulin, L., Striebig, N., Campillo, M., Deschamp, A., Hinderer, J., Leveque, J.J., Montagner, J.P., Rivera, L., Benz, W., Defraigne, P., Dehant, V., Fujimura, A., Mizutani, H., Oberst, J. “NetLander Very Broad Band Seismometer” Planetary and Space Science 48  (2000) 1289

23. Akiyama, T., Gautsch, S., de Rooij, N.F., Staufer, U., Niedermann, Ph., Howald, L., D. Müller, A. Tonin, H.-R. Hidber W. T. Pike, M. H. Hecht, “Atomic Force Microscope for Planetary Applications Sensors and Actuators B 91 (2001) 321

24. Anderson, M.S., Pike, W.T., “A Raman-atomic force microscope for apertureless-nearfield spectroscopy and optical trapping” Rev. Sci. Instruments 73 (2002) 1198

25. Gautsch S., Akiyama T., Imer R., de Rooij N.F., Staufer U., Niedermann P., Howald L., Brandlin D., Tonin A., Hidber H.R., Pike W.T., “Measurement of quartz particles by means of an atomic force microscope for planetary exploration” Surface And Interface Analysis 33 (2002) 163